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TP2150B Datasheet(PDF) 3 Page - Tripath Technology Inc.

Part No. TP2150B
Description  DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER
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Manufacturer  TRIPATH [Tripath Technology Inc.]
Direct Link  http://www.etelos.com/
Logo TRIPATH - Tripath Technology Inc.

TP2150B Datasheet(HTML) 3 Page - Tripath Technology Inc.

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Tr i p ath Technol ogy, I n c. - Techni cal In fo rma t io n
3
TP2150B - MC/ 1.7/06.04
Absolute Maximum Ratings TP2150B (Note 3)
SYMBOL
PARAMETER
Value
UNITS
VPP, VNN
Supply Voltage
+/- 65
V
VN10
Voltage for FET drive
VNN+13
V
V5
5V power supply
6
V
TSTORE
Storage Temperature Range
-55º to 150º
C
TA
Operating Free-air Temperature Range (Note 4)
-40º to 85º
C
TJ
Junction Temperature
150º
C
ESDHB
ESD Susceptibility – Human Body Model (Note 5)
All pins
2000
V
ESDMM
ESD Susceptibility – Machine Model (Note 6)
All pins
200
V
VLOGIC
Voltage input on logic pins (pins 9,13,14,16,17)
-0.3 to (V5+0.3)
V
VOCSH
Voltage input on MOSFET high side overcurrent detect pins (pins
33,34,50,51)
VPP
V
VOCSL
Voltage input on MOSFET low side overcurrent detect pins (pins
30,31,53,54)
VNN
V
VBOOT
Voltage input on VBOOT1 and VBOOT2 pins (pins 27,57)
VPP+12
V
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
See the table below for Operating Conditions.
Note 4: This is a target specification. Characterization is still needed to validate this temperature range.
Note 5: Human body model, 100pF discharged through a 1.5K
Ω resistor.
Note 6: Machine model, 220pF – 240pF discharged through all pins.
Thermal Characteristics TP2150B
SYMBOL
PARAMETER
Value
UNITS
θJA
Junction-to-air Thermal Resistance
35
°
C/W


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