MX26LV800T datasheet(1/48 Pages) MCNIX

Part #	MX26LV800T

Description	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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Manufacturer	MCNIX [Macronix International]

Direct Link	http://www.macronix.com

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P/N:PM1007

REV. 1.3, APR. 13, 2005

MX26LV800T/B

8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE

3V ONLY HIGH SPEED eLiteFlashTM MEMORY

• Status Reply

- Data# polling & Toggle bit for detection of program

and erase operation completion.

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion.

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55/70ns

• Low power consumption

- 30mA maximum active current

- 30uA typical standby current

• Command register architecture

- Byte/word Programming (55us/70us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase verify capability.

- Automatically program and verify data at specified

address

GENERAL DESCRIPTION

The MX26LV800T/B is a 8-mega bit high speed Flash

memory organized as 1M bytes of 8 bits or 512K words

of 16 bits. MXIC's high speed Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX26LV800T/B is pack-

aged in 48-pin TSOP, and 48-ball CSP. It is designed to

be reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX26LV800T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX26LV800T/B has separate chip enable (CE#) and

output enable (OE#) controls.

MXIC's high speed Flash memories augment EPROM

functionality with in-circuit electrical erasure and program-

ming. The MX26LV800T/B uses a command register to

manage this functionality. The command register allows

for 100% TTL level control inputs and fixed power sup-

ply levels during erase and programming, while main-

taining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores

memory contents even after 2,000 erase and program

cycles. The MXIC cell is designed to optimize the erase

and programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low in-

ternal electric fields for erase and program operations

produces reliable cycling. The MX26LV800T/B uses a

3.0V~3.6V VCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

Macronix NBitTM Memory Family

Similar Part No. - MX26LV800T

Manufacturer	Part #	Datasheet	Description
Macronix International	MX26LV800AB	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV800ABTC-55	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV800ABTC-55G	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV800ABTC-70	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV800ABTC-70G	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

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MX26LV800T Datasheet(PDF) 1 Page - Macronix International

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