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STM1A60 Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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STM1A60 Datasheet(HTML) 2 Page - SemiWell Semiconductor |
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2 / 5 page  Electrical Characteristics Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C -- 0.5 mA VTM Peak On-State Voltage IT = 1.5 A, Inst. Measurement -- 1.6 V I+GT1 I Gate Trigger Current VD = 6 V, RL=10 Ω -- 5 mA I -GT1 II -- 5 I -GT3 III -- 5 I+GT3 IV -7 12 V+GT1 I Gate Trigger Voltage VD = 6 V, RL=10 Ω -- 1.8 V V-GT1 II -- 1.8 V-GT3 III -- 1.8 V+GT3 IV -- 2.0 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 - - V (dv/dt)c Critical Rate of Rise Off- State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 2.0 - - V/㎲ IH Holding Current - 4.0 - mA Rth(j-c) Thermal Resistance Junction to case - - 25 °C/W Rth(j-a) Thermal Resistance Junction to Ambient - - 60 °C/W STM1A60 2/5 ※ Notes : 1. Pulse Width ≤ 300us , Duty cycle ≤ 2% |
Similar Part No. - STM1A60 |
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Similar Description - STM1A60 |
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