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SFP60N03L Datasheet(PDF) 1 Page - SemiWell Semiconductor |
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SFP60N03L Datasheet(HTML) 1 Page - SemiWell Semiconductor |
1 / 7 page Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 30 V ID Continuous Drain Current(@TC = 25°C) 60 A Continuous Drain Current(@TC = 100°C) 43 A IDM Drain Current Pulsed (Note 1) 240 A VGS Gate to Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Total Power Dissipation(@TC = 25 °C) 100 W Derating Factor above 25 °C 0.67 W/°C TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 175 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 1.50 °C/W RθCS Thermal Resistance, Case to Sink - 0.5 - °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W SFP60N03L September, 2002. Rev. 0. 1/7 Features ■ Low RDS(on) (0.0135Ω )@VGS=10V ■ Low Gate Charge (Typical 21.5nC) ■ Low Crss (Typical 130pF) ■ Improved dv/dt Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET TO-220 1 2 3 ● ● ● ▲ ◀ ● ● ● ▲ ◀ Symbol 2. Drain 3. Source 1. Gate |
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