IXYS reserves the right to change limits, test conditions, and dimensions.

IXTK 200N10P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

60

97

S

C

iss

7600

pF

C

oss

V

2900

pF

C

rss

860

pF

t

d(on)

30

ns

t

r

V

35

ns

t

d(off)

R

150

ns

t

f

90

ns

Q

g(on)

240

nC

Q

gs

V

50

nC

Q

gd

135

nC

R

thJC

0.18 K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

200

A

I

SM

Repetitive

400

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

120

ns

-di/dt = 100 A/

µs

Q

RM

V

3.3

µC

TO-264(SP) Outline (IXTK)

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463