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PACUSB-D1 Datasheet(PDF) 4 Page - California Micro Devices Corp

Part No. PACUSB-D1
Description  USB Downstream Port Terminator
Download  9 Pages
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Maker  CALMIRCO [California Micro Devices Corp]
Homepage  http://www.calmicro.com
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PACUSB-D1 Datasheet(HTML) 4 Page - California Micro Devices Corp

   
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© 2004 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
▲ Tel: 408.263.3214
▲ Fax: 408.263.7846 ▲ www.calmicro.com
09/14/04
PACUSB-D1/D2/D3
Specifications (cont’d)
Note 1: Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise.
Note 2: Guaranteed by design and characterization.
Note 3: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Note 4: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,
they do not require the high ESD protection levels provided for pins 4 and 5.
Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
R1
Resistance of R1 Resistor
(PACUSB-D2Y5/Y5R, -D2YB5/YB5R)
TA = 25°C
12
15
18
Ω
R1
Resistance of R1 Resistor
(PACUSB-D3Y5/Y5R, -D3YB5/YB5R)
TA = 25°C
17.6
22
26.4
Ω
R1
Resistance of R1 Resistor
(PACUSB-D1Y5/Y5R, -D1YB5/YB5R)
TA = 25°C
26.4
33
39.6
Ω
R2
Resistance of R2 Resistor
TA = 25°C
15
k
Ω
TCR
Temperature Coefficient of Resistance Note 1
+1300
ppm/
°C
C1
Capacitance of C1 Capacitor
0 VDC; 30 mVAC; 1MHz; 25°C
37.6
47
56.4
pF
2.5 VDC; 30 mVAC; 1MHz; 25°C
25.6
32
38.4
pF
TOLCM
Matching Tolerance of C1 Capacitors
1MHz; 25°C
+2%
ILEAK
Diode Leakage Current to GND
Measured at 3.3 VDC, 25°C
1
100
nA
VRB
Diode Reverse Bias Voltage
ILOAD = 10μA; TA = 25°C
5.5
V
VSIG
Signal Voltage:
Positive Clamp
Negative Clamp
ILOAD = 10mA; TA = 25°C
ILOAD = 10mA; TA = 25°C
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
VESD
In-system ESD Withstand Voltage
MIL-STD-883D, Method 3015
(HBM)
IEC 61000-4-2 Contact Discharge
Pins 1, 3; Notes 2,3 and 4
Pins 4, 5; Notes 2 and 3
Pins 4, 5; Notes 2 and 3
+4
+20
+15
kV
kV
kV
VCL
Clamping voltage under ESD
discharge
MIL-STD-883D, Method 3015
+8kV; Notes 2 and 5
12
V
MIL-STD-883D, Method 3015 -
8kV; Notes 2 and 5
-7
V


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