TSKS5400S datasheet(2/6 Pages) VISHAY

Part #	TSKS5400S

Description	GaAs Infrared Emitting Diode in Side View Package

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Manufacturer	VISHAY [Vishay Siliconix]

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TSKS5400S

Vishay Semiconductors

www.vishay.com

2 (6)

Rev. 1, 30–Apr–02

Document Number 81074

Basic Characteristics

Tamb = 25°C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 100 mA, tp x 20 ms

VF

1.3

1.7

V

Reverse voltage

IR = 10 µA

VVR

6

V

Junction capacitance

VR =0 V, f = 1 MHz, E = 0

Cj

50

pF

Radiant intensity

IF = 50 mA, tp x 20 ms

Ie

2

7

mW/ sr

Radiant power

IF = 50 mA, tp x 20 ms

φe

10

mW

Temp. coefficient of

φe

IF = 50 mA

TKφe

–1.0

%K

Angle of half sensitivity

ϕ

±30

°

Peak wavelength

IF = 50 mA

λ p

950

nm

Spectral bandwidth

IF = 50 mA

∆λ

50

nm

Rise time

IF = 1 A, tp/T = 0.01, tp x 10 µs

tr

400

ns

Fall time

IF = 1 A, tp/T = 0.01, tp x 10 µs

tf

450

ns

Typical Characteristics (Tamb = 25_C, unless otherwise specified)

0

50

100

150

200

0

20406080

100

Tamb – Ambient Temperature ( °C )

14846

RthJA

Figure 1. Power Dissipation vs. Ambient Temperature

0

25

50

75

100

125

0

20406080

100

Tamb – Ambient Temperature ( °C )

14847

RthJA

Figure 2. Forward Current vs. Ambient Temperature

01

2

3

VF – Forward Voltage ( V )

4

94 7996 e

101

100

102

103

104

10–1

Figure 3. Forward Current vs. Forward Voltage

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–45 –30 –15

0

15

30

45

60

75

90

Tamb – Ambient Temperature ( °C )

14347

IF = 10 mA

Figure 4. Forward Voltage vs. Ambient Temperature

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