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DTB113ZN3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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DTB113ZN3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C379N3 Issued Date : 2003.10.05 Revised Date : 2004.02.26 Page No. : 1/4 DTD113ZN3 CYStek Product Specification NPN Digital Transistors (Built-in Resistors) DTD113ZN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTB113ZN3 Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Limits Unit Supply Voltage VCC 50 V Input Voltage VIN -5~+10 V Output Current IO 500 mA Power Dissipation Pd 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C SOT-23 DTD113ZN3 R1=1k Ω , R2=10 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter |
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