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MA127 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # MA127
Description  Silicon epitaxial planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA127 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Switching Diodes
1
Note) *1 : Value for single diode
*2 :t = 1 s
MA6X127
Silicon epitaxial planar type
For switching circuits
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
• The mirror image wiring of (MA6X122)
• High breakdown voltage (V
R = 80 V)
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
I Electrical Characteristics T
a
= 25°C
Marking Symbol: M2U
1 : Anode 3,4
4 : Anode 1,2
2 : Cathode 1
5 : Cathode 3
3 : Cathode 2
6 : Cathode 4
Mini Type Package (6-pin)
Internal Connection
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Average forward current*
1
IF(AV)
100
mA
Peak forward current*
1
IFM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
1,2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
0.65
± 0.15
0.65
± 0.15
1
6
5
4
3
2
0.4
± 0.2
0.1 to 0.3
6
5
4
1
2
3
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 75 V
100
nA
Forward voltage (DC)
VF
IF
= 100 mA
1.2
V
Reverse voltage (DC)
VR
IR
= 100 µA80
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
15
pF
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
10
ns
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
W.F.Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 10 mA
V
R = 6 V
R
L = 100 Ω
10%
Input Pulse
Output Pulse
I
rr = 0.1 · IR
t
r
t
p
t
rr
V
R
I
F
t
t
A


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