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BTN8050N3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTN8050N3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 1/4 BTN8050N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTN8050N3 Description The BTN8050N3 is designed for general purpose low frequency amplifier applications. Features • High collector current , IC = 0.8A • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTP8550N3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note) A Power Dissipation Pd 225 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single pulse, Pw=10ms BTN8050N3 SOT-23 B:Base C:Collector E:Emitter |
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