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BTD1857AM3 Datasheet(PDF) 2 Page - Cystech Electonics Corp.

Part No. BTD1857AM3
Description  Silicon NPN Epitaxial Planar Transistor
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

BTD1857AM3 Datasheet(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C855M3-R
Issued Date : 2004.08.06
Revised Date : 2005.01.14
Page No. : 2/4
BTD1857AM3
CYStek Product Specification
Thermal Characteristics
Parameter
Symbol
Value
Unit
208
125 (Note 1)
Thermal Resistance, Junction to Ambient
RθJA
62.5 (Note 2)
°C/W
105
60
Thermal Resistance, Junction to Case
RθJC
39.3
°C/W
Note
: 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V
IC=50µA, IE=0
BVCEO
160
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=50µA, IC=0
ICBO
-
-
1
µA
VCB=160V, IE=0
IEBO
-
-
1
µA
VEB=4V, IC=0
*VCE(sat)
-
-
0.6
V
IC=1A, IB=100mA
*VBE(on)
-
-
1.5
V
VCE=5V, IC=150mA
hFE1
82
-
320
-
VCE=5V, IC=150mA
hFE2
30
-
-
-
VCE=5V, IC=500mA
fT
-
140
-
MHz
VCE=5V, IC=150mA
Cob
-
27
-
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
P
Q
R
Range
82~190
120~200
180~320


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