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BTD1857AM3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTD1857AM3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2005.01.14 Page No. : 1/4 BTD1857AM3 CYStek Product Specification Silicon NPN Epitaxial Planar Transistor BTD1857AM3 Description • High BVCEO • High current capability • Complementary to BTB1236AM3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) ICP 3 A 0.6 1 (Note 1) Power Dissipation PD 2 (Note 2) W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm BTD1857AM3 SOT-89 B：Base C：Collector E：Emitter B C E |
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