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BTB1236AL3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1236AL3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C854L3 Issued Date : 2004.07.28 Revised Date : Page No. : 1/4 BTB1236AL3 CYStek Product Specification Silicon PNP Epitaxial Planar Transistor BTB1236AL3 Description • High BVCEO • High current capability Symbol Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -1.5 A Collector Current (Pulse) ICP -3 A Power Dissipation @TC=25℃ Pd 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTB1236AL3 B:Base C:Collector E:Emitter |
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