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BTB1182J3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1182J3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 BTB1182J3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -2 A Collector Current (Pulse) ICP -5 (Note) A Power Dissipation (TC=25℃) Pd 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse , Pw=10ms BTB1182J3 TO-252 B:Base C:Collector E:Emitter B C E |
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