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2N3904 Datasheet(PDF) 1 Page - ON Semiconductor

Part # 2N3904
Description  NPN General - Purpose Amplifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N3904 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2002
July, 2021 − Rev. 2
1
Publication Order Number:
2N3904/D
NPN General - Purpose
Amplifier
2N3904
Description
This device is designed as a general−purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.) (Note 1, Note 2)
Symbol
Parameter
Value
Unit
VCEO
Collector−Emitter Voltage
40
V
VCBO
Collector−Base Voltage
60
V
VEBO
Emitter−Base Voltage
6.0
V
IC
Collector Current − Continuous
200
mA
TJ, TSTG
Operating and Storage Junction
Temperature Range
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed orlow−duty cycle operations.
THERMAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted.)
Symbol
Parameter
Max
Unit
PD
Total Device Dissipation
625
mW
Derate Above 25°C
5.0
mW/°C
RqJC
Thermal Resistance,
Junction to Case
83.3
°C/W
RqJA
Thermal Resistance,
Junction to Ambient
200
°C/W
MARKING DIAGRAM
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
12 3
A/2N
3904
YWW
1: Emitter
2: Base
3: Collector
A
= Assembly Code
2N3904
= Device Code
YWW
= Date Code
1 23
1 2
3
TO−92 3
CASE 135AN
TO−92 3
LEADFORMED
CASE 135AR


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