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2

Advance Product Information

June 29, 2001

RECOMMENDED MAXIMUM RATINGS

Symbol

Parameter

Value

Notes

Control Voltage

-8 V

Control Current

1 mA

3/

Power Dissipation

0.1 W

Input Continuous Wave Power

20 dBm

Operating Channel Temperature

150

°C

1/, 2/

Mounting Temperature (30 seconds)

320

°C

Storage Temperature

-65

°C to 150 °C

1/

These ratings apply to each individual FET

2/

Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be

maintained at the lowest possible levels.

3/

Total current for the entire MMIC

Electrical Characteristics

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

ON-WAFER RF PROBE CHARACTERISTICS

°C ± 5°C)

Symbol Parameter

Test Condition

Vctnl=0V / -2.5V

Limit

Min Nom Max

Units

IL

Insertion Loss F = 18, 19, 20 GHz

States 0 and 31

-5.5

-4.6

-4.0

dB

IRL

Input Return

Loss

F = 18, 19, 20 GHz

States 0 and 31

-16

-11

dB

ORL

Output Return

Loss

F = 18, 19, 20 GHz

States 0 and 31

-14

-11

dB

PS

Phase Shift

F = 18, 19, 20 GHz

State 31

342

344

350

deg

0

200

400

600

800

1000

1200

-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0

19 GHz Reference State Insertion Loss (dB)

TGP1439-EPU