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HYB39S64800CT-7.5 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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HYB39S64800CT-7.5 Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 52 page HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM Data Book 11 12.99 terminate once the burst length has been reached. In other words, unlike burst length of 2, 3 or 8, full page burst continues until it is terminated using another command. Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column address are possible once the RAS cycle latches the sense amplifiers. The maximum t RAS or the refresh interval time limits the number of random column accesses. A new burst access can be done even before the previous burst ends. The interrupt operation at every clock cycle is supported. When the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. An interrupt which accompanies an operation change from a read to a write is possible by exploiting DQM to avoid bus contention. When two or more banks are activated sequentially, interleaved bank read or write operations are possible. With the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. Once two or more banks are activated, column to column interleave operation can be done between different pages. Refresh Mode SDRAM has two refresh modes, Auto Refresh and Self Refresh. Auto Refresh is similar to the CAS -before-RAS refresh of conventional DRAMs. All of banks must be precharged before applying any refresh mode. An on-chip address counter increments the word and the bank addresses and no bank information is required for both refresh modes. The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are held high at a clock timing. The mode restores word line after the refresh and no external precharge Burst Length and Sequence Burst Length Starting Address (A2 A1 A0) Sequential Burst Addressing (decimal) Interleave Burst Addressing (decimal) 2xx0 xx1 0, 1 1, 0 0, 1 1, 0 4x00 x01 x10 x11 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 8000 001 010 011 100 101 110 111 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 3 4 5 6 7 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 3 2 1 0 7 6 5 4 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0 Full Page (optional) nnn Cn, Cn+1, Cn+2,..... not supported |
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