IC63LV1024

2

Integrated Circuit Solution Inc.

AHSR025-0D

04/16/2004

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

128K x 8 HIGH-SPEED CMOS STATIC RAM

3.3V REVOLUTIONARY PINOUT

FEATURES

• High-speed access times:

8, 10, 12 and 15 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE

options

• CE power-down

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

– 32-pin 300mil SOJ

– 32-pin 400mil SOJ

– 32-pin 400mil TSOP-2

– 36-pin TF-BGA (6mmx8mm)

DESCRIPTION

The

072-word by 8-bit CMOS static RAM in revolutionary pinout.

The IC63LV1024 is fabricated using

ance CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields higher

performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) with CMOS input levels.

The IS63LV1024 operates from a single 3.3V power supply

and all inputs are TTL-compatible.

The IS63LV1024 is available in 32-pin 300mil SOJ, 400mil

SOJ, 400mil TSOP-2 and 36-pin TF-BGA (6mmx8mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A16

CE

OE

WE

128K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7