TC55NEM216ASTV55 datasheet(10/12 Pages) TOSHIBA

Part #	TC55NEM216ASTV55

Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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10 / 12 page

TC55NEM216ASTV55,70

2002-10-30

10/12

,

CONTROLLED

DATA RETENTION MODE

(See Note 3)

Note:

(1)

In CE controlled data retention mode, minimum standby current mode is entered when CS

≤ 0.2 V or

CS

≥ VDD − 0.2 V.

(2)

When CE is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1 during the

transition of VDD from 4.5 to 2.4 V.

(3)

In CS controlled data retention mode, minimum standby current mode is entered when CS

≤ 0.2 V.

(4)

In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when

CE

,CS

≤ 0.2 V or CE ,CS ≥ VDD − 0.2 V.

(5)

When UB (or LB ) is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1

during the transition of VDD from 4.5 to 2.4 V.

UB LB

VDD

4.5 V

GND

VIH

DATA RETENTION MODE

tR

(See Note 4)

tCDR

VDD

VDD − 0.2 V

UB , LB

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