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TC55NEM216ASTV55 Datasheet(PDF) 10 Page - Toshiba Semiconductor |
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TC55NEM216ASTV55 Datasheet(HTML) 10 Page - Toshiba Semiconductor |
10 / 12 page TC55NEM216ASTV55,70 2002-10-30 10/12 , CONTROLLED DATA RETENTION MODE (See Note 3) Note: (1) In CE controlled data retention mode, minimum standby current mode is entered when CS ≤ 0.2 V or CS ≥ VDD − 0.2 V. (2) When CE is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1 during the transition of VDD from 4.5 to 2.4 V. (3) In CS controlled data retention mode, minimum standby current mode is entered when CS ≤ 0.2 V. (4) In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE ,CS ≤ 0.2 V or CE ,CS ≥ VDD − 0.2 V. (5) When UB (or LB ) is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1 during the transition of VDD from 4.5 to 2.4 V. UB LB VDD 4.5 V GND VIH DATA RETENTION MODE tR (See Note 4) (See Note 4) tCDR VDD VDD − 0.2 V UB , LB |
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