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N08L163WC1C Datasheet(PDF) 4 Page - NanoAmp Solutions, Inc.

Part No. N08L163WC1C
Description  8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Download  9 Pages
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Maker  NANOAMP [NanoAmp Solutions, Inc.]
Homepage  http://www.nanoamp.com
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N08L163WC1C Datasheet(HTML) 4 Page - NanoAmp Solutions, Inc.

   
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Stock No. 23394-B 01/05
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N08L163WC1C
Advance Information
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
1V/ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 50pF
Operating Temperature
-40 to +85 oC
Timing
Item
Symbol
55
Units
Min
Max
Read Cycle Time
tRC
55
ns
Address Access Time (Random Access)
tAA
55
ns
Chip Enable to Valid Output
tCO
55
ns
Output Enable to Valid Output
tOE
25
ns
Byte Select to Valid Output
tLB, tUB
55
ns
Chip Enable to Low-Z output
tLZ
10
ns
Output Enable to Low-Z Output
tOLZ
5ns
Byte Select to Low-Z Output
tLBZ, tUBZ
10
ns
Chip Disable to High-Z Output
tHZ
20
ns
Output Disable to High-Z Output
tOHZ
20
ns
Byte Select Disable to High-Z Output
tLBHZ, tUBHZ
20
ns
Output Hold from Address Change
tOH
10
ns
Write Cycle Time
tWC
55
ns
Chip Enable to End of Write
tCW
40
ns
Address Valid to End of Write
tAW
40
ns
Byte Select to End of Write
tLBW, tUBW
40
ns
Write Pulse Width
tWP
40
ns
Address Setup Time
tAS
0ns
Write Recovery Time
tWR
0ns
Write to High-Z Output
tWHZ
20
ns
Data to Write Time Overlap
tDW
25
ns
Data Hold from Write Time
tDH
0
ns
End Write to Low-Z Output
tOW
10
ns


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