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OM100L60CMIS Datasheet(PDF) 2 Page - International Rectifier

Part No. OM100L60CMIS
Description  CERMOD-TM HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT’S
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

OM100L60CMIS Datasheet(HTML) 2 Page - International Rectifier

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Rev.05
Omnirel LLC
205 Crawford Street, Leominster, MA 01453
4/15/
99
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
ELECTRICAL CHARACTERISTICS: (Tc= 25
°°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
GE
=0V
VCES
600
V
Zero Gate Voltage Collector Current, V
GE
=0, V
CE
=600V
ICES
25
µA
Gate Emitter Leakage Current, V
GE
=+/-15V, V
CE
=0V
IGES
2
µA
ON CHARACTERISTICS
Gate Threshold Voltage, V
CE
=VGE, IC =6mA
VGE(TH)
4.5
6.0
6.5
V
Collector Emitter Saturation Voltage, V
GE
=15V, IC=100A
VCE(SAT)
2.0
2.5
V
DYNAMIC CHARACTERISTICS
Fwd.Transconductance
V CE =5V, I
C
=100A
gfs
55
S
Input Capacitance
VGE =0
Cies
4.5
nF
Output Capacitance
VCE =25V
Coes
0.7
nF
Rev. Transfer Capacitance
f=1.0MHz
Cres
1.7
nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
t(on)
192
nS
Rise Time
VCC = 300V, I
C
=100A
tr
81
nS
Turn-on Losses
VGE =+15/-10V, R
G
=10
Eon
5.4
mJ
Turn-off Delay Time
L=100
µH,Tj=125
°C
td(off)
285
nS
Fall Time
tf
44
nS
Turn-off Losses
Eoff
1.4
mJ
DIODE CHARACTERISTICS
Maximum Forward Voltage
IF=100A, Tj=25
°C
VF
1.4
1.8
V
Tj=125
°C
1.5
1.9
VR =300V, Tj=25
°C
Qrr
2
µC
Reverse Recovery
IF=100A, Tj=125
°C
3.7
Characteristics
dI/dt=-1080A/
µS Tj=25
°C
Irr
51
A
Tj=125
°C
68
Tj=25
°C
trr
124
nS
Tj=125
°C
215
THERMAL
AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)R thJC
0.35
°C/W
Thermal Resistance, Junction to Case (Per Diode)
R thJC
0.6
°C/W
Maximum Junction Temperature
TjMAX
150
°C
Isolation Voltage
Vis
RMS
-V
Screw Torque
Mounting
-
15
20
in-
lb
Module Weight
-
250
Grams
OM100L60CMIS


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