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MRF9060MR1 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF9060MR1
Description  The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF9060MR1 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF9060MR1 MRF9060MBR1
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9060MR1
MRF9060MBR1
C6 (Minimum)
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
MRF9060MR1
MRF9060MBR1
1
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
0.21
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs
5.3
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
101
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
53
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2.5
pF
(continued)


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