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MRF9060MR1 Datasheet(PDF) 6 Page - Motorola, Inc

Part No. MRF9060MR1
Description  The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF9060MR1 Datasheet(HTML) 6 Page - Motorola, Inc

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MRF9060MR1 MRF9060MBR1
6
MOTOROLA RF DEVICE DATA
Gps
960
11
19
-36
50
IRL
η
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
Two-Tone, 100 kHz Tone Spacing
f, Frequency (MHz)
Figure 3. Class AB Broadband Circuit Performance
-10
-18
-14
-12
-16
18
45
17
40
16
35
15
-28
14
-30
13
-32
12
-34
955
950
945
940
935
930
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
100
8
20
0.1
0
60
η
VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
18
50
16
40
14
30
12
20
10
10
110
Gps
100
19
IDQ = 625 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
275 mA
500 mA
18.5
18
17.5
17
16.5
10
1
100
-55
-15
IDQ = 275 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
500 mA
625 mA
-20
-30
-40
-50
110
-45
-35
-25
100
-80
-10
7th Order
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
-20
-30
-40
-50
-60
-70
110
IMD


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