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MA2ZD02 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. MA2ZD02
Description  Silicon epitaxial planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA2ZD02 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Schottky Barrier Diodes (SBD)
MA2ZD02
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Mini package (S-mini type 2-pin)
• Reverse current (DC value) V
R is low
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward
IFSM
3A
surge current*
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-
repetitive)
Internal Connection
Marking Symbol: 2H
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR1
VR = 5 V
1
µA
IR2
VR = 10 V
10
µA
Forward voltage (DC)
VF1
IF = 10 mA
0.3
0.4
V
VF2
IF = 500 mA
0.5
0.55
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time*
trr
IF = IR = 100 mA
5
ns
Irr = 0.1 · IR, RL = 100 Ω
I Electrical Characteristics T
a = 25°C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
W.F.Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse
Output Pulse
I
rr = 0.1 · IR
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
2
KA
2.5
± 0.2
1.7
± 0.1
0.4
± 0.1
0.4
± 0.1
21


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