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CMT01N60 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. CMT01N60
Description  POWER FIELD EFFECT TRANSISTOR
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Maker  ETC1 [List of Unclassifed Manufacturers]
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CMT01N60 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

   
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CMT01N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-251
Front View
1
23
TO-252
Front View
1
23
TO-92
Front View
1
23
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain to Current - Continuous
Pulsed
ID
IDM
1.0
9.0
A
Gate-to-Source Voltage - Continue
Non-repetitive
VGS
VGSM
±30
±40
V
V
Total Power Dissipation
TO-251/252
PD
50
W
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
(VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω)
EAS
20
mJ
Thermal Resistance - Junction to Case
Junction to Ambient
θJC
θJA
1.0
62.5
/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
260
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 1


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