If MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

Storage Temperature Range

Ceramic DIP

b

Operating Temperature Range

DS26F32M

b

DS26F32C

Lead Temperature

Ceramic DIP (soldering 60 sec)

300 C

Maximum Power Dissipation at 25 C

Cavity Package

1500 mW

Supply Voltage

70V

Derate cavity package 10 mW C above 25 C

Common Mode Voltage Range

g

25V

Differential Input Voltage

g

25V

Enable Voltage

70V

Output Sink Current

50 mA

Operating Range

DS26F32C

Temperature

Supply Voltage

475V to 525V

DS26F32M

Temperature

b

Supply Voltage

45V to 55V

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Differential Input Voltage

b

b

02

g

006

a

02

V

Input Resistance

b

14

18

kX

One Input AC Ground

Input Current (under Test)

23

mA

b

28

Output Voltage HIGH

28

34

D

V

b

25

34

Output Voltage LOW

04

D

045

V

Enable Voltage LOW

08

V

Enable Voltage HIGH

20

V

Enable Clamp Voltage

b

15

V

Off State (High Impedance)

20

m

A

Output Current

b

20

Enable Current LOW

b

02

b

036

mA

Enable Current HIGH

05

10

m

A

Enable Input High Current

10

50

m

A

Output Short Circuit Current

b

15

b

50

b

85

mA

D

Supply Current

30

50

mA

Outputs Disabled

Input Hysteresis

30

mV

Note 1

‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices

should be operated at these limits The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation

Note 2

Note 3

All currents into the device pins are positive all currents out of the device pins are negative All voltages are reference to ground unless otherwise

specified

Note 4

Only one output at a time should be shorted

http

www nationalcom

2