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TLE9185QXV33 Datasheet(PDF) 104 Page - Infineon Technologies AG

Part # TLE9185QXV33
Description  BLDC Driver
Download  192 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE9185QXV33 Datasheet(HTML) 104 Page - Infineon Technologies AG

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TLE9185QXV33
BLDC Driver
Supervision Functions
Datasheet
104
Rev.1.0
2021-01-21
For Half-Bridges in PWM mode with AFWx = 1:
• the blank time of the PWM MOSFET starts at the expiration of the cross-current protection time of the PWM
MOSFET. Refer to Figure 53.
• the blank time of the free-wheeling MOSFET starts after expiration of the cross-current protection time at
turn-off of the PWM MOSFET. Refer to Figure 53.
Figure 53 Blank time for half-bridges in PWM operation with AFW = 1
For statically activated half-bridges, the blank time starts:
• Case1: at expiration of the cross-current protection (Figure 23), if the opposite MOSFET was previously
activated.
• Case 2: right after the decoding of the SPI command to turn on a MOSFET, if the half-bridge was in high
impedance (Figure 24).
The blank times of the active and FW MOSFETs can be configured with the control register CCP_BLK.
The typical blank is 587 ns + 266 ns x TBLK[3:0]D).
Note:
The blank time is implemented at every new activation of a MOSFET, including a recovery from VS
undervoltage, VS overvoltage, VSINT overvoltage, CP UV, CP OT.
10.9.1.3 OFF-state diagnostic
In order to support the off-state diagnostic (HBxMODE= 11 and CPEN = 1), the gate driver of each MOSFET
provides pull-up (IPUDiag) and a pull-down currents (IPDDiag) at the SHx pins. This function requires an activated
charge pump.
The pull-up current source of a given half-bridge is on when the half-bridge is active: HBxMODE= 01, 10 or 11
and CPEN = 1.
The pull-down current of each low-side gate driver is activated by the control bits HBx (HB_ICHG_MAX
register).
During the off-state diagnostic routine performed by the microcontroller, the drain-source overvoltage
threshold of the relevant half-bridges must be set to 2V nominal. Refer to Table 28. Once the routine is
finished, it is highly recommended to decrease the drain-source overvoltage threshold to a lower value,
avoiding additional current consumption from the VS input.
IGS_PWM
MOSFET
IGS Freewheeling
MOSFET
ICHGMAXz
- ICHGMAXz
IPRECHGz
- IPREDCHGz
ICHGMAXz
- IDCHGz
ICHGz
Post-charge
0
PWM
tPDCHGz
t
t
t
tHBxCPP
tBLANK for
PWM MOSFET
tBLANK for
freewheeling MOSFET
tHBxCPP for
symmetrisation
tHBxCPP
tPCHGz


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