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SMM150NCR02 Datasheet(PDF) 5 Page - Summit Microelectronics, Inc. |
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SMM150NCR02 Datasheet(HTML) 5 Page - Summit Microelectronics, Inc. |
5 / 22 page SMM150 Preliminary Information Summit Microelectronics, Inc 2075 2.6 05/13/05 5 ABSOLUTE MAXIMUM RATINGS Temperature Under Bias ...................... -55 °C to 125°C Storage Temperature QFN ................... -65 °C to 150°C Terminal Voltage with Respect to GND: VDD Supply Voltage ..........................-0.3V to 6.0V All Others ................................-0.3V to VDD + 0.7V FAULT#…………………………….… GND to 15.0V Output Short Circuit Current ............................... 100mA Reflow Solder Temperature (10 secs)….………....240 °C Junction Temperature.........................…….....…...150°C ESD Rating per JEDEC……………………..……..2000V Latch-Up testing per JEDEC………..……......… ±100mA Note - The device is not guaranteed to function outside its operating rating. Stresses listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions outside those listed in the operational sections of the specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Devices are ESD sensitive. Handling precautions are recommended. RECOMMENDED OPERATING CONDITIONS Temperature Range (Industrial) .......... –40 °C to +85°C (Commercial).............. 0 °C to +70°C VDD Supply Voltage.................................. 2.7V to 5.5V Inputs.........................................................GND to VDD Package Thermal Resistance ( θJA) 28 Pad QFN…………….…………………….…80 oC/W 20 Ball Ultra CSP TM………..………….…….…TBDoC/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 RELIABILITY CHARACTERISTICS Data Retention……………………………..…..100 Years Endurance……………………….……….100,000 Cycles DC OPERATING CHARACTERISTICS (Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.) Symbol Parameter Notes Min. Typ. Max Unit VDD Supply Voltage 2.7 3.3 5.5 V VM Positive Sense Voltage VM pin 0.3 VDD V IDD Power Supply Current from VDD TRIM pin floating 3 mA TRIM Sourcing Max Current 1.5 mA ITRIM TRIM output current through 100 Ω to 1.0V TRIM Sinking Max Current -1.5 mA VTRIM TRIM output voltage range ITRIM ±1.5mA GND 2.5 V VADOC Margin Range Depends on Trim range of DC- DC Converter 0.3 VDD V VDD = 2.7V 0.9xVDD VDD VIH Input High Voltage SDA,SCL,WP,MUP,MDN VDD = 5.0V 0.7xVDD VDD V VDD = 2.7V 0.1xVDD VIL Input Low Voltage SDA,SCL,WP,MUP,MDN VDD = 5.0V 0.3xVDD V VOL Open Drain Output FAULT#, READY ISINK = 1mA 0.2 V VDD = 2.7V, Rpullup≤300kΩ 0.9xVDD VDD VAIH Address Input High Voltage, A2, A1, A0 VDD = 5.0V, Rpullup≤300kΩ 0.7xVDD VDD V VDD = 2.7V, Rpulldown≤300kΩ 0.1xVDD VAIL Address Input Low Voltage, A2, A1, A0 VDD = 5.0V, Rpulldown≤300kΩ 0.3xVDD V VDD = 2.7V -1.8 +1.4 IAIT Address Input Tristate Maximum Leakage – High Z VDD = 5.0V -2.0 +1.6 µA OV/UV Monitor Voltage Range COMP1 and COMP2 pins 0 VDD V VHYST COMP1/2 DC Hysteresis COMP1 and COMP2 pins, VTH-VTL (see Note 1) 10 mV RPull-Up Input Pull-Up Resistors See Pin Descriptions 50 k Ω Note 1 – The Base DC Hysteresis voltage is measured with a 1.25V external voltage source. The resulting value is determined by subtracting Threshold Low from Threshold High, VTH-VTL while monitoring the FAULT# pin state. Base DC Hysteresis is measured with a 1.25V input. Actual DC Hysteresis is derived from the equation: (VIN/VREF)(Base Hysteresis). For example, if VIN=2.5V and VREF=1.25V then Actual DC Hysteresis= (2.5V/1.25V)(0.003V)=6mV. |
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