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XP01211 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. XP01211
Description  Silicon NPN epitaxial planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XP01211 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  XP01211 Datasheet HTML 1Page - Panasonic Semiconductor XP01211 Datasheet HTML 2Page - Panasonic Semiconductor XP01211 Datasheet HTML 3Page - Panasonic Semiconductor  
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1
Publication date: June 2003
SJJ00136BED
Composite Transistors
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 µA, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 50 V, I
B
= 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
35
hFE Ratio *
hFE(Small
VCE = 10 V, IC = 5 mA
0.50
0.99
/Large)
Collector-emitter saturation voltage
VCE(sat)
IC
= 10 mA, I
B
= 0.3 mA
0.25
V
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
V
Input resistance
R1
−30%
10
+30%
k
Resistance ratio
R1 / R2
0.8
1.0
1.2
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
XP01211 (XP1211)
Silicon NPN epitaxial planar type
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2211 (UN2211) × 2
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: 9T
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
12
Tr1
Tr2
3
4
5
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base (Tr1)
4: Collector (Tr2)
2: Emitter
5: Collector (Tr1)
3: Base (Tr2)
EIAJ: SC-88A
SMini5-G1 Package
1
3
2
0.20±0.05
1.3±0.1
2.0±0.1
54
(0.65) (0.65)
0.12
+0.05
–0.02
10˚


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