BLS7G3135L-350P_7G3135LS-350P#4

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© Ampleon The Netherlands B.V. 2015. All rights reserved.

Product data sheet

Rev. 4 — 1 September 2015

2 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

2. Pinning information

[1]

Connected to flange.

3. Ordering information

4. Limiting values

[1]

Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF

calculator.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BLS7G3135L-350P (SOT539A)

1drain1

2drain2

3gate1

4gate2

5source

[1]

BLS7G3135LS-350P (SOT539B)

1drain1

2drain2

3gate1

4gate2

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLS73135L-350P

-

flanged balanced ceramic package; 2 mounting holes;

4 leads

SOT539A

BLS73135LS-350P -

earless flanged balanced ceramic package; 4 leads

SOT539B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+11

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C