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K4F661612E Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K4F661612E
Description  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Download  35 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4F661612E Datasheet(HTML) 6 Page - Samsung semiconductor

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CMOS DRAM
K4F661612E, K4F641612E
Industrial Temperature
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Refresh period (Normal)
tREF
64
64
64
ms
Refresh period (L-ver)
tREF
128
128
128
ms
Write command set-up time
tWCS
0
0
0
ns
7
CAS to W delay time
tCWD
32
36
38
ns
7,15
RAS to W delay time
tRWD
67
73
83
ns
7
Column address to W delay time
tAWD
43
48
53
ns
7
CAS precharge W delay time
tCPWD
48
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
5
ns
Access time from CAS precharge
tCPA
26
30
35
ns
3
Fast Page mode cycle time
tPC
31
35
40
ns
Fast Page mode read-modify-write cycle time
tPRWC
70
76
85
ns
CAS precharge time (Fast page cycle)
tCP
9
10
10
ns
14
RAS pulse width (Fast page cycle)
tRASP
45
200K
50
200
60
200
ns
RAS hold time from CAS precharge
tRHCP
28
30
35
ns
OE access time
tOEA
12
13
15
ns
3
OE to data delay
tOED
12
13
13
ns
Output buffer turn off delay time from OE
tOEZ
0
13
0
13
0
13
ns
6
OE command hold time
tOEH
12
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
10
10
ns
11
Write command hold time (Test mode in)
tWTH
15
15
15
ns
11
W to RAS precharge time (C-B-R refresh)
tWRP
10
10
10
ns
W to RAS hold time (C-B-R refresh)
tWRH
10
10
10
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
20,21,22
RAS precharge time (C-B-R self refresh)
tRPS
80
90
110
ns
20,21,22
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
20,21,22


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