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K4F661612E Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K4F661612E
Description  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Download  35 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4F661612E Datasheet(HTML) 4 Page - Samsung semiconductor

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CMOS DRAM
K4F661612E, K4F641612E
Industrial Temperature
*Note :
ICC1 , ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS =VIL. In I CC4,
address can be changed maximum once within one fast page mode cycle time,
tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS , Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS =W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @
tRC =min.)
ICC4* : Fast Page Mode Current (RAS=VIL , UCAS or LCAS, Address cycling @
tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS =W=VCC -0.2V)
ICC6* : CAS-Before- RAS Refresh Current (RAS and UCAS or LCAS cycling @
tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS =CAS -before-RAS cycling or 0.2V,
W, OE=VIH, Address=Don
′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS =LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC -0.2V or 0.2V, DQ0 ~ DQ15=V CC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4F661612E
K4F641612E
ICC1
Don
′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
mA
mA
ICC3
Don
′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC4
Don
′t care
-45
-50
-60
70
60
50
70
60
50
mA
mA
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
mA
uA
ICC6
Don
′t care
-45
-50
-60
130
120
110
130
120
110
mA
mA
mA
ICC7
L
Don
′t care
350
350
uA
ICCS
L
Don
′t care
350
350
uA


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