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STC62WV1M8 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. STC62WV1M8
Description  Very Low Power/Voltage CMOS SRAM 1M X 8 bit
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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STC62WV1M8 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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Revision 2.1
Jan.
2004
3
R0201-
STC62WV1M8
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/t
RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation.
5.IccsB1 is 5uA/55uA at Vcc=3.0V/5.0V and TA=70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
3. IccDR(Max.) is 1.3uA at TA=70OC.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
STC
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
VIH
Vcc
VDR
1.5V
CE1
Vcc - 0.2V
STC62WV1M8
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR
(3)
Data Retention Current
CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.8
2.5
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
--
ns
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
Vcc=3V
-0.5
--
0.8
VIL
Guaranteed Input Low
Voltage
(3)
Vcc=5V
-0.5
--
0.8
V
Vcc=3V
2.0
--
Vcc+0.3
VIH
Guaranteed Input High
Voltage
(3)
Vcc=5V
2.2
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH or CE2 = VIL or
OE = VIH, VI/O = 0V to Vcc
--
--
1
uA
Vcc=3V
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=5V
--
--
0.4
V
Vcc=3V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=5V
2.4
--
--
V
70ns
Vcc=3V
--
--
25
ICC
(4)
Operating Power Supply
Current
CE1= VIL, CE2= VIH,
IDQ = 0mA, F = Fmax
(2)
70ns
Vcc=5V
--
--
61
mA
Vcc=3V
--
--
1
ICCSB
Standby Current-TTL
CE1 = VIH or CE2= VIL, IDQ = 0mA
Vcc=5V
--
--
2
mA
Vcc=3V
--
1.5
10
ICCSB1
(5)
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
Vcc=5V
--
8.0
110
uA
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
VIL
Vcc
VDR ≧ 1.5V
CE2 ≦ 0.2V


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