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MP4T6825 Datasheet(PDF) 1 Page - M-pulse Microwave Inc.

Part # MP4T6825
Description  Low Current 8 Volt, Low Noise High fT Silicon Transistor
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Manufacturer  MPLUSE [M-pulse Microwave Inc.]
Direct Link  http://www.mpulsemw.com
Logo MPLUSE - M-pulse Microwave Inc.

MP4T6825 Datasheet(HTML) 1 Page - M-pulse Microwave Inc.

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Specification Subject to Change Without Notice
M
M-Pulse Microwave__________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise
High fT Silicon Transistor
MP4T6825 Series
Features
• Low Current Operation
• High fT (8 GHz)
• Low Noise Figure with 1-5 mA Current
• Low Phase Noise
• Inexpensive
• Available on Tape and Reel
Description
The MP4T6825 series of low current silicon bipolar
transistors provide low noise figure at a bias of 5-10 volts
and collector current of 1-5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs from VHF through 2.5 GHz.
The MP4T6825 series has high fT (8 GHz) and provides
approximately 1.5 dB noise figure with 1-3 mA current.
These transistors also have low phase noise when used in 5-
10 volt low current VCOs through 3 GHz.
The MP4T6825 series are inexpensive transistors designed
for RF systems that require low current drain. This family of
transistors is available in chip (MP4T682500), SOT-23
(MP4T682533), SOT-143 (MP4T682539), and in the Micro-
X (MP4T682535) packages. Surface mount packages are
available on tape and reel.
Absulote Maximum Ratings at 25
°C
Parameter
Absolute Maximum
Collector-Base Voltage
20V
Collector-Emitter Voltage
12 V
Emitter-Base Voltage
1.5 V
Collector Current
25 mA
Junction Temperature
+200
°C
2
Storage Temperature
Chips or Ceramic Packages
-65
°C to +200°C
Plastic Packages
-65
°C to +150°C
Power Dissipation
1
1.
See power derating curves.
2.
Die or ceramic packages -150
°C for plastic pacakges.
SOT-23
SOT-143
Chip


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