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MA2C196 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. MA2C196
Description  Silicon epitaxial planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA2C196 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Switching Diodes
1
MA2C196
Silicon epitaxial planar type
For switching circuits
I Features
• Low forward dynamic resistance r
f
• Small terminal capacitance, C
t
I Absolute Maximum Ratings T
a = 25
°C
1 : Cathode
2 : Anode
JEDEC : DO-34
Unit : mm
Parameter
Symbol
Rating
Unit
Forward voltage (DC)
VR
50
V
Repetitive peak reverse voltage
VRRM
50
V
Average forward current
IF(AV)
100
mA
Repetitive peak forward current
IFRM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Tj
200
°C
Storage temperature
Tstg
−55 to +200
°C
Note) * : t = l s
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
COLORED BAND
INDICATES
CATHODE
2
1
Type No.
MA2C196
Color
1st Band
Green
2nd Band
Green
I Cathode Indication
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR1
VR = 15 V
5
nA
IR2
VR = 50 V
10
nA
IR3
VR = 50 V, Ta = 150°C
100
µA
Forward voltage (DC)
VF
IF = 100 mA
1.2
V
Reverse voltage (DC)
VR
IR = 100
µA50
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
4
pF
Forward dynamic resistance
rf1
IF = 3 mA, f = 30 MHz
2.5
rf2
IF = 3 mA, f = 30 MHz
3.6
Reverse recovery time*
trr
IF = 10 mA, VR = 1 V
0.2
ms
Irr = 0.1 · IR, RL = 100
I Electrical Characteristics T
a = 25
°C
Note) 1. Rated input/output frequency: 2.5 kHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
W.F.Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 10 mA
V
R = 1 V
R
L = 100 Ω
10%
Input Pulse
Output Pulse
I
rr = 0.1 · IR
t
r
t
p
t
rr
V
R
I
F
t
t
A


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