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CM150DU-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM150DU-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM150DU-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
02468
10
180
60
0
VGE = 20V
15
13
12
11
8
Tj = 25
oC
120
240
300
10
9
14
COLLECTOR-CURRENT, I
C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
80
160
240
4
3
2
1
0
320
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 60A
IC = 300A
IC = 150A
3.4
0.6
1.0
1.4
1.8
2.6
2.2
3.0
101
102
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
102
101
10-1
100
VGE = 0V
101
Coes
Cres
Cies
COLLECTOR CURRENT, I
C, (AMPERES)
104
101
102
103
103
101
102
100
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 4.2 Ω
Tj = 125°C
tf
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
101
102
103
102
103
101
Irr
trr
di/dt = -300A/
µsec
Tj = 25°C
101
100
102
GATE CHARGE, Q
G, (nC)
GATE CHARGE, VGE
20
0
100
300
200
16
12
8
4
0
400
VCC = 300V
VCC = 200V
IC = 150A
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
240
180
120
60
0
300
VCE = 10V
Tj = 25°C
Tj = 125°C


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