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CM150DU-12H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM150DU-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM150DU-12H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
3.7
94.0
B
3.15
±0.01
80.0
±0.25
C
1.89
48.0
D
0.94
24.0
E
0.28
7.0
F
0.67
17.0
G
0.91
23.0
H
0.91
23.0
J
0.43
11.0
K
0.71
18.0
L
0.16
4.0
Dimensions
Inches
Millimeters
M
0.47
12.0
N
0.53
13.5
O
0.1
2.5
P
0.63
16.0
Q
0.98
25.0
R
1.18 +0.04/-0.02 30.0 +1.0/-0.5
S
0.3
7.5
T
0.83
21.2
U
0.16
4.0
V
0.51
13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-12H is a
600V (VCES), 150 Ampere Dual
IGBT Module.
Current Rating
VCES
Type
Amperes
Volts (x 50)
CM
150
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
E2
E1
G1
E2
G2
C1
C2E1
A
G
F
V
2 - Mounting
Holes
(6.5 Dia.)
E
U
H
E2
C1
C2E1
C
3-M5 Nuts
D
B
J
K
L
N
M
P
P
Q
O
O
TC Measured
Point
R
S
T
TAB#110 t=0.5


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