KTC4075 datasheet(1/2 Pages) JIANGSU

Part #	KTC4075

Description	TRANSISTOR竊뉿PN 竊

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

KTC4075

TRANSISTOR（NPN ）

FEATURES

Power dissipation

PCM :

0.1

W（Tamb=25℃）

Collector current

ICM:

0.15

A

Collector-base voltage

V(BR)CBO :

60

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃　

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC = 100 μA，

IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1mA， IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA， IC=0

5

V

Collector cut-off current

ICBO

VCB=60 V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

μA

DC current gain

hFE

VCE= 6V， IC=2mA

70

700

Collector-emitter saturation voltage

VCEsat

IC=100mA, IB= 10mA

0.25

V

Transition frequency

fT

VCE=10V,

IC= 1mA

80

MHz

Collector output capacitance

Cob

VCE=10V， IE=0，f=1MHz

3.5

dB

Noise figure

NF

VCE=6 V，IE=0.1mA, f=1KHz，RG=10K?

10

dB

CLASSIFICATION OF hFE

Rank

O

Y

GR

BL

Range

70~140

120~240

200~400

350~700

Marking

LO

LY

LGR

LBL

Unit : mm

SOT—23

1. BASE

2. EMITTER

3. COLLECTOR

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KTC4075 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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