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FPDB30PH60 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. FPDB30PH60
Description  Smart Power Module for Front-End Rectifier
Download  12 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FPDB30PH60 Datasheet(HTML) 4 Page - Fairchild Semiconductor

 
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©2005 Fairchild Semiconductor Corporation
January, 2006
Absolute Maximum Ratings (T
J = 25°C, Unless Otherwise Specified)
Converter Part
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150
°C(@T
C ≤ 100°C). However, to insure safe operation of the SPM,
the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)
Control Part
Total System
Thermal Resistance
Note :
2. For the measurement point of case temperature(TC), please refer to Fig. 2.
Item
Symbol
Condition
Rating
Unit
Supply Voltage
Vi
Applied between R-S
264
VRMS
Supply Voltage (Surge)
Vi(Surge)
Applied between R-S
500
V
Output Voltage
VPN
Applied between P- N
450
V
Output Voltage (Surge)
VPN(Surge)
Applied between P- N
500
V
Collector-emitter Voltage
VCES
600
V
Input Current (100% Load)
Ii
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz
20
A
Input Current (125% Load)
Ii(125%)
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz, 1min Non-repetitive
25
A
Collector Dissipation
PC
TC = 25°C per One IGBT
83
W
Power Rating of Shunt Resistor
PRSH
TC < 125°C
2
W
Operating Junction Temperature
TJ
(Note 1)
-20 ~ 125
°C
Item
Symbol
Condition
Rating
Unit
Control Supply Voltage
VCC
Applied between VCC - COM
20
V
Input Signal Voltage
VIN
Applied between IN - COM
-0.3~5.5
V
Fault Output Supply Voltage
VFO
Applied between VFO - COM
-0.3~VCC+0.3
V
Fault Output Current
IFO
Sink Current at VFO Pin
5
mA
Current Sensing Input Voltage
VSC
Applied between CSC - COM
-0.3~VCC+0.3
V
Item
Symbol
Condition
Rating
Unit
Module Case Operation Temperature
TC
-20 ~ 100
°C
Storage Temperature
TSTG
-40 ~ 125
°C
Isolation Voltage
VISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
2500
Vrms
Item
Symbol
Condition
Min. Typ.
Max.
Unit
Junction to Case Thermal
Resistance
(Referenced to PKG cen-
ter)
(j-c)Q IGBT
-
-
1.2
°C/W
(j-c)HD High-side diode
-
-
2.0
°C/W
(j-c)LD Low-side diode
-
-
1.4
°C/W


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