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VSC7991 Datasheet(PDF) 3 Page - Vitesse Semiconductor Corporation

Part No. VSC7991
Description  SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
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Maker  VITESSE [Vitesse Semiconductor Corporation]
Homepage  http://www.vitesse.com
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VSC7991 Datasheet(HTML) 3 Page - Vitesse Semiconductor Corporation

 
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
G52321-0, Rev 2.3
Page 3
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Absolute Maximum Ratings(1)
Negative Power Supply Voltage (VSS)..............................................................................................VCC to −8.0V
All Pins ................................................................................................................................................VSS to + .5V
Supply Voltage (VSS) ......................................................................................................................................... 8V
Supply Current (ISS) .................................................................................................................................... 500mA
Input Voltage (VIN)........................................................................................................................................ −2.0V
Output Voltage (VOUT)................................................................................................................................. −4.0V
Modulation Control Voltage (VIP).........................................................................................................VSS − 0.5V
Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V
Output Offset Control Current (IIB) .............................................................................................................. 50mA
Maximum Junction Temperature Range
..................................................................................... −55°C to +125°C
Storage Temperature Range:
....................................................................................................... −55°C to +125°C
Note:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND) .............................................................................................................................. 0V
Negative Voltage Rail (VSS)...........................................................................................................−6.5V to −7.2V
Operational Case Temperature (TC1) ...................................................................................................0°C to 75°C


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