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TMS28F004AZB90BDCDL Datasheet(PDF) 65 Page - Texas Instruments |
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TMS28F004AZB90BDCDL Datasheet(HTML) 65 Page - Texas Instruments |
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65 / 80 page  TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 65 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 switching characteristics for TMS28F004AZy and TMS28F400AZy over recommended ranges of supply voltage (commercial and extended temperature ranges) read operations ALT ’28F004AZy 60 ’28F400AZy 60 ’28F004AZy 70 ’28F400AZy 70 ’28F004AZy 80 ’28F400AZy 80 PARAMETER ALT. SYMBOL 5-V VCC RANGE 5-V VCC RANGE 5-V VCC RANGE UNIT MIN MAX MIN MAX MIN MAX ta(A) Access time from A0 – A17 (see Note 15) tAVQV 60 70 80 ns ta(E) Access time from E tELQV 60 70 80 ns ta(G) Access time from G tGLQV 35 40 40 ns tc(R) Cycle time, read tAVAV 60 70 80 ns td(E) Delay time, E low to low-impedance output tELQX 0 0 0 ns td(G) Delay time, G low to low-impedance output tGLQX 0 0 0 ns tdis(E) Disable time, E to high-impedance output tEHQZ 25 30 30 ns tdis(G) Disable time, G to high-impedance output tGHQZ 25 30 30 ns th(D) Hold time, DQ valid from A0 – A17, E, or G, whichever occurs first (see Note 15) tAXQX 0 0 0 ns tsu(EB) Setup time, BYTE from E low tELFL tELFH 5 5 5 ns td(RP) Output delay time from RP high tPHQV 450 450 450 ns tdis(BL) Disable time, BYTE low to DQ8 – DQ15 in high-impedance state tFLQZ 25 30 30 ns ta(BH) Access time from BYTE going high tFHQV 60 70 80 ns NOTE 15: A–1 – A17 for byte-wide switching characteristics for TMS28F400AZy over recommended ranges of supply voltage (automotive temperature range) read operations ALT ’28F004AZy 70 ’28F400AZy 70 ’28F004AZy80 ’28F400AZy80 ’28F004AZy90 ’28F400AZy90 PARAMETER ALT. SYMBOL 5-V VCC RANGE 5-V VCC RANGE 5-V VCC RANGE UNIT MIN MAX MIN MAX MIN MAX ta(A) Access time from A0 – A17 (see Note 15) tAVQV 70 80 90 ns ta(E) Access time from E tELQV 70 80 90 ns ta(G) Access time from G tGLQV 35 40 45 ns tc(R) Cycle time, read tAVAV 70 80 90 ns td(E) Delay time, E low to low-impedance output tELQX 0 0 0 ns td(G) Delay time, G low to low-impedance output tGLQX 0 0 0 ns tdis(E) Disable time, E to high-impedance output tEHQZ 25 30 35 ns tdis(G) Disable time, G to high-impedance output tGHQZ 25 30 35 ns th(D) Hold time, DQ valid from A0 – A17, E, or G, whichever occurs first (see Note 15) tAXQX 0 0 0 ns tsu(EB) Setup time, BYTE from E low tELFL tELFH 5 5 5 ns NOTE 15: A–1 – A17 for byte-wide |
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