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TMS28F004AZB80CDCDL Datasheet(PDF) 52 Page - Texas Instruments |
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TMS28F004AZB80CDCDL Datasheet(HTML) 52 Page - Texas Instruments |
52 / 80 page TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 52 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F004AFy and TMS28F400AFy The TMS28F004AFy and the TMS28F400AFy configurations offer a 5-V memory read with a 5-V or 12-V program and erase. This configuration is intended for systems using a single 5-V power supply and it is offered in three temperature ranges: 0 °C to 70°C, – 40°C to 85°C, and – 40°C to 125°C. recommended operating conditions for TMS28F004AFy and TMS28F400AFy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 5-V VCC range 4.5 5 5.5 V During read only ( VPPL ) VPPL 0 6.5 VPP Supply voltage During write/erase/erase suspend 5-V VPP range 4.5 5 5.5 V During write/erase/erase suspend 12-V VPP range 11.4 12 12.6 VIH High level dc input voltage TTL 2 VCC + 0.3 V VIH High-level dc input voltage CMOS VCC – 0.2 VCC + 0.2 V VIL Low level dc input voltage TTL – 0.3 0.8 V VIL Low-level dc input voltage CMOS VSS – 0.2 VSS + 0.2 V VLKO VCC lock-out voltage from write/erase (see Note 7) 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V L Suffix 0 70 °C TA Operating free-air temperature E Suffix – 40 85 °C Q Suffix – 40 125 °C NOTE 7: Mimimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F004AFy and TMS28F400AFy (see Notes 8 and 9) PARAMETER 5-V VPP AND 5-V VCC RANGES 12-V VPP AND 5-V VCC RANGES MIN TYP MAX MIN TYP MAX Main block erase time 1.9 1.1 14 Main block byte-program time 1.4 1.2 4.2 Main block word-program time 0.9 0.6 2.1 Parameter/ boot-block erase time 0.8 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds) |
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