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TMS28F004AZB70BDBJL Datasheet(PDF) 23 Page - Texas Instruments |
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TMS28F004AZB70BDBJL Datasheet(HTML) 23 Page - Texas Instruments |
23 / 80 page TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 23 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F004ASy and TMS28F400ASy The TMS28F004ASy and the TMS28F400ASy configurations have the auto-select feature that allows alternative read and program / erase voltages. Memory reads can be performed using VCC = 3.3 V for optimal power consumption or at VCC = 5 V for device performance. Erasing or programming the device can be accomplished with VPP = 5 V, which eliminates having to use a 12-V source and/or in-system voltage converters. Alternatively, the 12-V VPP operation exists for systems that already have a 12-V power supply that provides faster programming and erasing times. This configuration is offered in two temperature ranges (0 °C to 70 °C and –40°C to 85°C). recommended operating conditions for TMS28F004ASy and TMS28F400ASy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 3.3-V VCC range 3 3.3 3.6 V VCC Supply voltage During write/read/erase/erase suspend 5-V VCC range 4.5 5 5.5 V During read only ( VPPL ) VPPL 0 6.5 VPP Supply voltage During write/erase/erase suspend 5-V VPP range 4.5 5 5.5 V During write/erase/erase suspend 12-V VPP range 11.4 12 12.6 33 V VCC range TTL 2 VCC + 0.5 VIH High-level dc input 3.3-V VCC range CMOS VCC – 0.2 VCC + 0.2 V VIH g voltage 5V VCC range TTL 2 VCC + 0.3 V 5-V VCC range CMOS VCC – 0.2 VCC + 0.2 33 V VCC range TTL – 0.5 0.8 VIL Low-level dc input 3.3-V VCC range CMOS VSS – 0.2 VSS + 0.2 V VIL voltage 5V VCC range TTL – 0.3 0.8 V 5-V VCC range CMOS VSS – 0.2 VSS + 0.2 VLKO VCC lock-out voltage from write/erase (see Note 7) 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V TA Operating free air temperature L Suffix 0 70 °C TA Operating free-air temperature E Suffix – 40 85 °C NOTE 7: Mimimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F004ASy and TMS28F400ASy (see Notes 8 and 9) 5-V VPP RANGE 12-V VPP RANGE PARAMETER 3.3-V VCC RANGE 5-V VCC RANGE 3.3-V VCC RANGE 5-V VCC RANGE MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX Main block-erase time 2.4 1.9 1.3 1.1 14 Main block-byte program time 1.7 1.4 1.6 1.2 4.2 Main block-word program time 1.1 0.9 0.8 0.6 2.1 Parameter/ boot-block erase time 0.84 0.8 0.44 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds) |
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