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TMS28F004AZB70BDBJL Datasheet(PDF) 62 Page - Texas Instruments |
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TMS28F004AZB70BDBJL Datasheet(HTML) 62 Page - Texas Instruments |
62 / 80 page TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 62 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F004AZy and TMS28F400AZy The TMS28F004AZy and the TMS28F400AZy configurations offer a 5-V memory read with a 12-V program and a 12-V erase for fast programming and erasing times. This configuration is offered in three temperature ranges: 0 °C to 70°C, – 40°C to 85°C, and – 40°C to 125°C. recommended operating conditions for TMS28F004AZy and TMS28F400AZy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 5-V VCC range 4.5 5 5.5 V VPP Supply voltage During read only VPPL 0 6.5 V VPP Supply voltage During write/erase/erase suspend 12-V VPP range 11.4 12 12.6 V VIH High level dc input voltage TTL 2 VCC + 0.3 V VIH High-level dc input voltage CMOS VCC – 0.2 VCC + 0.2 V VIL Low level dc input voltage TTL – 0.3 0.8 V VIL Low-level dc input voltage CMOS VSS – 0.2 VSS + 0.2 V VLKO VCC lock-out voltage from write/erase (see Note 7) 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V L Suffix 0 70 °C TA Operating free-air temperature E Suffix – 40 85 °C Q Suffix – 40 125 °C NOTE 7: Mimimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F400AZy and TMS28F400AZy (see Notes 8 and 9) PARAMETER 12-V VPP AND 5-V VCC RANGES MIN TYP MAX Main block-erase time 1.1 14 Main block-byte program time 1.2 4.2 Main block-word program time 0.6 2.1 Parameter/ boot-block erase time 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds) |
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