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TMS28F004AZB60BDBJL Datasheet(PDF) 44 Page - Texas Instruments

Part No. TMS28F004AZB60BDBJL
Description  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TMS28F004AZB60BDBJL Datasheet(HTML) 44 Page - Texas Instruments

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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/262144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
44
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F004AMy and TMS28F400AMy
The TMS28F004AMy and the TMS28F400AMy configurations offer a 3-V or 5-V memory read with a 12-V
program and erase. This configuration is intended for low 3.3-V reads and the fast programming offered with
the 12-V VPP = 12 V and 5-V VCC. This configuration is offered in two different temperature ranges: 0°C to 70°C
and – 40
°C to 85°C.
recommended operating conditions for TMS28F004AMy and TMS28F400AMy
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
3.3-V VCC range
3
3.3
3.6
V
VCC
Supply voltage
During write/read/erase/erase suspend
5-V VCC range
4.5
5
5.5
V
VPP
Supply voltage
During read only ( VPPL )
VPPL
0
6.5
V
VPP
Supply voltage
During write/erase/erase suspend
12-V VPP range
11.4
12
12.6
V
3 3VVCC range
TTL
2
VCC + 0.5
VIH
High-level dc
3.3 V VCC range
CMOS
VCC – 0.2
VCC + 0.2
V
VIH
g
input voltage
5VVCC range
TTL
2
VCC + 0.3
V
5 V VCC range
CMOS
VCC – 0.2
VCC + 0.2
3 3VVCC range
TTL
– 0.5
0.8
VIL
Low-level dc input
3.3 V VCC range
CMOS
VSS – 0.2
VSS + 0.2
V
VIL
voltage
5VVCC range
TTL
– 0.3
0.8
V
5 V VCC range
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VCC lock-out voltage from write/erase (see Note 7)
2
V
VHH
RP unlock voltage
11.4
12
13
V
VPPLK VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature
L Suffix
0
70
°C
TA
Operating free-air temperature
E Suffix
– 40
85
°C
NOTE 7: Mimimum value at TA = 25°C.
word/byte typical write and block-erase performance for TMS28F004AMy and TMS28F400AMy
(see Notes 8 and 9)
12-V VPP RANGE
PARAMETER
3.3-V VCC
RANGE
5-V VCC RANGE
MIN
TYP
MAX
MIN
TYP
MAX
Main block-erase time
1.3
1.1
14
Main block-byte program time
1.6
1.2
4.2
Main block-word program time
0.8
0.6
2.1
Parameter/ boot-block erase time
0.44
0.34
7
NOTES:
8. Typical values shown are at TA = 25°C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)


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