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TMS28F004AZB80CDBJL Datasheet(PDF) 33 Page - Texas Instruments |
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TMS28F004AZB80CDBJL Datasheet(HTML) 33 Page - Texas Instruments |
33 / 80 page TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A – JANUARY 1996 – REVISED AUGUST 1997 33 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F004AEy and TMS28F400AEy The TMS28F004AEy and the TMS28F400AEy configurations offer the auto-select feature of the TMS28F400ASy with an extended VCC from a low 2.7-V to 3.6-V range (3-V nominal). Memory reads can be performed using a VCC = 3 V, allowing for more efficient power consumption than the ’ASy device. recommended operating conditions for TMS28F004AEy and TMS28F400AEy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 3-V VCC range 2.7 3 3.6 V VCC Supply voltage During write/read/erase/erase suspend 5-V VCC range 4.5 5 5.5 V During read only ( VPPL ) VPPL 0 6.5 VPP Supply voltage During write/erase/erase suspend 5-V VPP range 4.5 5 5.5 V During write/erase/erase suspend 12-V VPP range 11.4 12 12.6 3V VCC range TTL 2 VCC + 0.5 VIH High-level dc input 3-V VCC range CMOS VCC – 0.2 VCC + 0.2 V VIH g voltage 5V VCC range TTL 2 VCC + 0.3 V 5-V VCC range CMOS VCC – 0.2 VCC + 0.2 3V VCC range TTL – 0.5 0.8 VIL Low-level dc input 3-V VCC range CMOS VSS – 0.2 VSS + 0.2 V VIL voltage 5V VCC range TTL – 0.3 0.8 V 5-V VCC range CMOS VSS – 0.2 VSS + 0.2 VLKO VCC lock-out voltage from write/erase (see Note 7) 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V TA Operating free air temperature L Suffix 0 70 °C TA Operating free-air temperature E Suffix – 40 85 °C NOTE 7: Mimimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F004AEy and TMS28F400AEy (see Notes 8 and 9) 5-V VPP RANGE 12-V VPP RANGE PARAMETER 3-V VCC RANGE 5-V VCC RANGE 3-V VCC RANGE 5-V VCC RANGE MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX Main block-erase time 2.4 1.9 1.3 1.1 14 Main block-byte program time 1.7 1.4 1.6 1.2 4.2 Main block-word program time 1.1 0.9 0.8 0.6 2.1 Parameter/ boot-block erase time 0.84 0.8 0.44 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds) |
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