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TMS28F004AZB70CDBJL Datasheet(PDF) 62 Page - Texas Instruments

Part No. TMS28F004AZB70CDBJL
Description  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TMS28F004AZB70CDBJL Datasheet(HTML) 62 Page - Texas Instruments

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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/262144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
62
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F004AZy and TMS28F400AZy
The TMS28F004AZy and the TMS28F400AZy configurations offer a 5-V memory read with a 12-V program and
a 12-V erase for fast programming and erasing times. This configuration is offered in three temperature ranges:
0
°C to 70°C, – 40°C to 85°C, and – 40°C to 125°C.
recommended operating conditions for TMS28F004AZy and TMS28F400AZy
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
5-V VCC range
4.5
5
5.5
V
VPP
Supply voltage
During read only
VPPL
0
6.5
V
VPP
Supply voltage
During write/erase/erase suspend
12-V VPP range
11.4
12
12.6
V
VIH
High level dc input voltage
TTL
2
VCC + 0.3
V
VIH
High-level dc input voltage
CMOS
VCC – 0.2
VCC + 0.2
V
VIL
Low level dc input voltage
TTL
– 0.3
0.8
V
VIL
Low-level dc input voltage
CMOS
VSS – 0.2
VSS + 0.2
V
VLKO
VCC lock-out voltage from write/erase (see Note 7)
2
V
VHH
RP unlock voltage
11.4
12
13
V
VPPLK VPP lock-out voltage from write/erase
0
1.5
V
L Suffix
0
70
°C
TA
Operating free-air temperature
E Suffix
– 40
85
°C
Q Suffix
– 40
125
°C
NOTE 7: Mimimum value at TA = 25°C.
word/byte typical write and block-erase performance for TMS28F400AZy and TMS28F400AZy
(see Notes 8 and 9)
PARAMETER
12-V VPP AND
5-V VCC RANGES
MIN
TYP
MAX
Main block-erase time
1.1
14
Main block-byte program time
1.2
4.2
Main block-word program time
0.6
2.1
Parameter/ boot-block erase time
0.34
7
NOTES:
8. Typical values shown are at TA = 25°C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)


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