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TMS28F004AZB60CDBJL Datasheet(PDF) 4 Page - Texas Instruments

Part No. TMS28F004AZB60CDBJL
Description  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TMS28F004AZB60CDBJL Datasheet(HTML) 4 Page - Texas Instruments

 
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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/262144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
4
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
description (continued)
The TMS28F004Axy is offered in a 512K-byte organization only. The operation for this device is the same as
the TMS28F400Axy and is offered in the same voltage configurations. TMS28F004Axy can be substituted for
the byte-wide TMS28F400Axy with the latter being the generic name for this device family.
Embedded program and block-erase functions are fully automated by the on-chip write state machine (WSM),
simplifying these operations and relieving the system microcontroller of secondary tasks. WSM status can be
monitored by an on-chip status register to determine progress of program / erase tasks. The device features
user-selectable block erasure.
The configurations are as follows:
D The TMS28F400ASy configuration has the auto-select feature that allows the user alternative read and
program / erase voltages. Memory reads can be performed using 3.3-V VCC for optimum power
consumption or 5-V VCC for device performance. Erasing or programming the device can be accomplished
with 5-V VPP, which eliminates having to use a 12-V source and/or in-system voltage converters.
Alternatively,12-V VPP operation exists for systems that already have a 12-V power supply, which provides
faster programming and erasing times. This configuration is offered in two temperature ranges: 0
°C to 70°C
and –40
°C to 85°C.
D The TMS28F400AEy configuration offers the auto-select feature of the TMS28F400ASy with an extended
VCC range of 2.7-V to 3.6-V (3-V nominal). Memory reads can be performed using 3-V VCC, for more efficient
power consumption than the ’ASy device.
D The TMS28F400AMy configuration offers a 3-V or 5-V memory read with a 12-V program and erase. This
configuration is intended for low 3.3-V reads and the fast programming offered with the 12-V VPP and 5-V
VCC. This configuration is offered in two temperature ranges: 0°C to 70°C and – 40°C to 85°C.
D The TMS28F400AFy configuration offers a 5-V memory read with a 5-V or 12-V program and erase. This
configuration is intended for systems using a single 5-V power supply. This configuration is offered in three
temperature ranges: 0
°C to 70°C, – 40°C to 85°C, and – 40°C to 125°C.
D The TMS28F400AZy configuration offers a 5-V memory read with a 12-V program and erase for fast
programming and erasing times. This configuration is offered in three temperature ranges: 0
°C to 70°C,
– 40
°C to 85°C, and – 40°C to 125°C.
The y in the device name represents a T for top or B for bottom boot-block configuration.
All configurations of the TMS28F400Axy are offered in a 44-pin plastic small-outline package (PSOP) and a
48-pin thin small-outline package (TSOP). The TMS28F004Axy is offered in a 40-pin TSOP only. Both the 40-pin
and 48-pin TSOP are offered for the 0
°C to 70°C and – 40°C to 85°C temperature ranges only.


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