TPCF8402 datasheet(1/11 Pages) TOSHIBA

Part #	TPCF8402

Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPCF8402

2003-08-18

1

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

TPCF8402

Portable Equipment Applications

Mortor Drive Applications

DC-DC Converter Applications

• Low drain-source ON resistance

: P Channel RDS (ON) = 60 mΩ (typ.)

N Channel RDS (ON) = 38 mΩ (typ.)

• High forward transfer admittance

: P Channel |Yfs| = 5.9 S (typ.)

N Channel |Yfs| = 6.8 S (typ.)

• Low leakage current

: P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

• Enhancement−mode

: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)

N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

-30

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

-30

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

-3.2

4.0

Drain current

Pulse

(Note 1)

IDP

-12.8

16.0

A

Single-device operation

(Note 3a)

PD (1)

1.35

Drain power

dissipation

(t

= 5 s)

(Note 2a)

Single-device value at

dual operation(Note 3b)

PD (2)

1.12

Single-device operation

(Note 3a)

PD (1)

0.53

Drain power

dissipation

(t

= 5 s)

(Note 2b)

Single-device value at

dual operation(Note 3b)

PD (2)

0.33

W

Single pulse avalanche energy(Note 4)

EAS

0.67

2.6

mJ

Avalanche current

IAR

-1.6

2.0

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please

refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

Marking (Note 6)

8

1

5

4

F6B

1

2

3

4

8

7

6

5

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