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K6T1008V2C-RB70 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6T1008V2C-RB70 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 11 page K6T1008V2C, K6T1008U2C Family CMOS SRAM Revision 2.0 November 1997 1 Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Remark Preliminary Final Final History Initial draft Finalize - Increased ISB, IDR Commercial part = 10 µA Industrial part = 20 µA Revise - Change speed bin KM68V1000C Family: 70/85ns → 70/100ns KM68U1000C Family: 70/100ns → 85/100ns - Improved operating current: 40mA → 35mA - Improved power dissipation PD: 0.7W → 1.0W - Improved standby current Extended/Industrial: 20 → 10µA - VIL: 0.4V → 0.6V Draft Data July 3, 1996 December 16, 1996 November 25, 1997 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. Revision No. 0.0 1.0 2.0 |
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